Patent · US Active

P-N junction optoelectronic device for ionizing dopants by field effect

US9601542B2 · kind B2 · utility

24Cited by

6References

18Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Ivan-Christophe Robin · Grenoble, FR
Hubert Bono · Grenoble, FR

Key dates

Filing date	Jun 25, 2015
Grant date	Mar 21, 2017
Priority date	—
Expiry date	Jun 25, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50

Abstract

An optoelectronic device comprising a mesa structure including:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.