Patent · US Active

Optoelectronic device comprising light-emitting diodes with improved light extraction

US9601543B2 · kind B2 · utility

4Cited by
0References
12Claims
0Family size

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Key dates

Filing dateDec 11, 2014
Grant dateMar 21, 2017
Priority date
Expiry dateDec 11, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/855
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.