Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
US9601579B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 27, 2014 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Aug 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.