IGBT and method of manufacturing the same
US9601592B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2015 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Oct 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
Abstract
An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.