Semiconductor device including fin structure with two channel layers and manufacturing method thereof
US9601626B2 · kind B2 · utility
3Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2015 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Jan 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin structure protruding from a substrate and having a top face and a first side face and a second side face opposite to the first side face, and first semiconductor layers disposed over the first and second side faces of the fin structure. A thickness in a vertical direction of the first semiconductor layers is smaller than a height of the fin structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.