Patent · US Active

LED structures for reduced non-radiative sidewall recombination

US9601659B2 · kind B2 · utility

17Cited by
3References
19Claims
0Family size

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Key dates

Filing dateJun 30, 2016
Grant dateMar 21, 2017
Priority date
Expiry dateJun 30, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/854

Abstract

LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.