Method of manufacturing magnetoresistive element and method of processing magnetoresistive film
US9601688B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 20, 2014 |
| Grant date | Mar 21, 2017 |
| Priority date | — |
| Expiry date | Feb 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32357
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a case where reactive ion etching using a gas containing an oxygen atom is used for etching or a magnetoresistive element, a magnetic film becomes damaged due to oxidation. Such damage to the element by the oxidation becomes a factor which causes deterioration in element properties. In the etching of the magnetoresistive element according to one embodiment of the present invention, a magnetoresistive film is subjected to ion beam etching and thereafter to reactive ion etching. A side deposition formed by the ion beam etching coats a sidewall of the magnetoresistive film and reduces damage by the oxygen atom during the later reactive ion etching. Also, a time during which the element is exposed to plasma of the gas containing the oxygen atom can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.