Method for detecting crystal defects
US9606030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2012 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Feb 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at α=the oxygen solid solubility/the initial oxygen concentration, α falls within a range from 1 to 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.