Processing apparatus, ion implantation apparatus and ion implantation method
US9606181B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jan 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An ion implantation method includes generating a first ion beam and a second ion beam, the first ion beam having a different configuration from the second ion beam. The method further includes scanning and directing the first ion beam along a first path toward a workpiece to perform ion implantation on the workpiece. The method alternatively includes directing the second ion beam along a second path toward the workpiece to perform ion implantation on the workpiece. The first path is different from the second path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.