Patent · US Active

XMR sensors with high shape anisotropy

US9606197B2 · kind B2 · utility

1Cited by

5References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Juergen Zimmer · Neubiberg, DE
Klemens Pruegl · Regensburg, DE
Olaf Kuehn · Suhl, DE
Andreas Strasser · Graz, AT
Ralf-Rainer Schledz · St. Margarethen, AT
Norbert Thyssen · Dresden, DE

Key dates

Filing date	Aug 19, 2015
Grant date	Mar 28, 2017
Priority date	—
Expiry date	Aug 19, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10N59/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.