Resist underlayer composition, method of forming patterns, and semiconductor integrated circuit device including the pattern
US9606438B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Nov 5, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a resist underlayer composition including a compound including a moiety represented by the following Chemical Formula 1 and a solvent.In the above Chemical Formula 1, A1 to A3, X1, X2, L1, L2, Z, and m are the same as defined in the specification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.