Multi-bit non-volatile random-access memory cells
US9607695B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2016 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Mar 24, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/0054
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Multi-bit non-volatile random access memory cells are disclosed. A multi-bit non-volatile random access memory cell may include a volatile storage element and a non-volatile storage circuit. The non-volatile storage circuit may include at least one first pass transistor connected to a data true (DT) node of the volatile storage element and at least one second pass transistor connected to a data complement (DC) node of the volatile storage element. The non-volatile storage circuit may also include multiple non-volatile storage elements. Each non-volatile storage element may be configured to be selectively connectable to the DT node of the volatile storage element via the at least one first pass transistor and selectively connectable to the DC node of the volatile storage element via the at least one second pass transistor, allowing the multi-bit non-volatile random access memory cell to store/recall more than one databit per cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.