Method for forming spacers for a transistor gate
US9607840B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 17, 2016 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jun 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A method for forming spacers of a gate of a transistor is provided, including forming a protective layer covering the gate; after the forming the protective layer, at least one step of forming a carbon film on the transistor; removing portions of the carbon film located on a top and on either side of the gate; modifying the protective layer on the top of the gate and on either side of the gate; and removing the modified protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.