Semiconductor device and method for fabricating the same
US9607982B1 · kind B1 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a bipolar junction transistor (BJT) is formed on the substrate, a metal-oxide semiconductor (MOS) transistor is formed on the substrate and electrically connected to the BJT, a resistor is formed on the substrate and electrically connected to the MOS transistor, a dielectric layer is formed on the substrate to cover the BJT, the MOS transistor, and the resistor, and an oxide-semiconductor field-effect transistor (OS-FET) is formed on the dielectric layer and electrically connected to the MOS transistor and the resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.