Mesa structure diode with approximately plane contact surface

US9608037B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Hubert Bono · Grenoble, FR
• Ivan-Christophe Robin · Grenoble, FR

Key dates

• Filing date: Jun 24, 2015
• Grant date: Mar 28, 2017
• Expiry date: Jun 24, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

There is provided an electronic device including at least two diodes each having a mesa structure, including: a first and a second doped semiconductor portion forming a p-n junction, such that a first part of the second doped semiconductor portion located between a second part of the second doped semiconductor portion and the first doped semiconductor portion forms an offset from the second part; a first electrode electrically connected to the first portion, and a second electrode electrically connected to the second portion at an upper face of the second part; and dielectric portions covering side faces of the first portion, the second portion, and the first electrode, wherein upper faces of the first electrode, the second electrode, and the dielectric portions form an approximately plane continuous surface.