High electron mobility transistor and method of manufacturing the same
US9608100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Aug 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
According to example embodiments, a high electron mobility transistor (HEMT) includes: stack including a buffer layer, a channel layer containing a two dimensional electron gas (2DEG) channel, and a channel supply layer sequentially stacked on each other, the stack defining a first hole and a second hole that are spaced apart from each other. A first electrode, a second electrode, and third electrode are spaced apart from each other along a first surface of the channel supply layer. A first pad is on the buffer layer and extends through the first hole of the stack to the first electrode. A second pad is on the buffer layer and extends through the second hole of the stack to the second electrode. A third pad is under the stack and electrically connected to the third electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.