Semiconductor device and Zener diode having branch impurity regions
US9608129B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2015 |
| Grant date | Mar 28, 2017 |
| Priority date | — |
| Expiry date | Oct 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/128
Abstract
A semiconductor device includes a substrate, a well region of a first-conductivity type disposed in the substrate, a first impurity region of a second-conductivity type and having a plurality of branches disposed in the well region, a second impurity region of the first-conductivity type and having a plurality of branches, and a third impurity region of the first-conductivity type disposed in the well region. The second-conductivity type is opposite to the first-conductivity type. A portion of the first impurity region overlaps a portion of the third impurity region. The plurality of branches of the second impurity region are disposed in the third impurity region, and a portion of the third impurity region is disposed between the first impurity region and the second impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.