Semiconductor device having trench capacitor structure integrated therein

US9608130B2 · kind B2 · utility

Assignee

• Maxim Integrated Products, Inc. · US

Inventors

• Khanh Tran · Milpitas, US
• Joseph P. Ellul · Ottawa, CA
• Edward Martin Godshalk · Newberg, US
• Kiyoko Ikeuchi · Sunnyvale, US
• Anuranjan Srivastava · Dublin, US

Key dates

• Filing date: Dec 17, 2012
• Grant date: Mar 28, 2017
• Expiry date: Dec 17, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D48/021

Abstract

Semiconductor devices are described that include a capacitor integrated therein. In an implementation, the semiconductor devices include a substrate. The substrate includes multiple capacitor regions, such as a first capacitor region and a second capacitor region that are adjacent to one another. Each capacitor region includes trenches that are formed within the substrate. A metal-insulator-metal capacitor is formed within the trenches and at least partially over the substrate. The trenches disposed within the first capacitor region are at least substantially perpendicular to the trenches disposed within the second capacitor region.