Qualifying patterns for microlithography
US9612541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Sep 18, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire at least two images at different imaging configurations from each pattern area of the reticle. A reticle pattern is reconstructed based on each at least two images from each pattern area of the reticle. For each reconstructed reticle pattern, a lithographic process with two or more different process conditions is modeled on such reconstructed reticle pattern to generate two or more corresponding modeled test wafer patterns. Each two or more modelled test wafer patterns is analyzed to identify hot spot patterns of the reticle patterns that are susceptible to the different process conditions altering wafer patterns formed with such hot spot patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.