Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9613798B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2015 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Mar 6, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.