Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US9613858B2 · kind B2 · utility
0Cited by
53References
16Claims
0Family size
Inventors
Key dates
| Filing date | Jul 8, 2014 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Nov 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.