Patent · US Active

Raised e-fuse

US9613898B2 · kind B2 · utility

0Cited by

0References

19Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Andreas Kurz · Oberursel, DE
Andrei Sidelnicov · Dresden, DE

Key dates

Filing date	Aug 28, 2015
Grant date	Apr 4, 2017
Priority date	—
Expiry date	Aug 28, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device with a fuse is provided including the steps of providing a semiconductor-on-insulator (SOI) structure including an insulating layer and a semiconductor layer formed on the insulating layer, forming a first raised semiconductor region on the semiconductor layer and a second raised semiconductor region on the semiconductor layer adjacent to the first semiconductor region, and performing a silicidation process of the first and second raised semiconductor regions to form a first at least partially silicided raised semiconductor region with a first silicided portion and a second at least partially silicided raised semiconductor region with a second silicided portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.