Patent · US Active

Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof

US9613929B2 · kind B2 · utility

1Cited by

4References

7Claims

0Family size

Assignee

DANFOSS SILICON POWER GMBH · DE

Inventors

Martin Becker · Kiel, DE
Ronald Eisele · Surendorf, DE
Frank Osterwald · Kiel, DE
Jacek Rudzki · Kiel, DE

Key dates

Filing date	Apr 11, 2016
Grant date	Apr 4, 2017
Priority date	—
Expiry date	Apr 11, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.