Method of forming metal gate to mitigate antenna defect
US9613959B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 28, 2015 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Jul 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to methods of forming a field effect transistor (FET) over a substrate, and associated integrated circuit device that improve etching back profile and prevent metal gate defect. In some embodiments, a recess is formed through an inter-layer dielectric (ILD) layer along a sidewall spacer and filled with a high-κ dielectric layer and a metal gate. An etch back is performed to lower the high-κ dielectric layer and the metal gate, where an “antenna” shaped residue of the high-κ dielectric material and the metal gate material is left at the boundary region of the high-κ layer and the metal gate, along the sidewall spacer. Then a second etch is performed to the sidewall spacer, removing a top edge portion of the sidewall spacer. Then one more step of etch can be performed to the high-κ layer and the metal gate to planarize and remove the residue.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.