Semiconductor device
US9614071B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 25, 2014 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Apr 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that extends from the front surface into the drift layer and is insulated by an insulating film, a source layer, a buried layer that is provided between the drift layer and the base layer and is formed such that the depth from the front surface to an end thereof on the side of the drift layer is greater than the depth from the front surface to a distal end of the trench, and a first epitaxial layer that is provided between the buried layer and the base layer and has a higher impurity concentration than the buried layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.