Semiconductor structure having enlarged regrowth regions and manufacturing method of the same
US9614085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2016 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Aug 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
Abstract
The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top surface of the insulation region; a gate over the semiconductor fin; and a regrowth region partially positioned in the semiconductor fin, and the regrowth region forming a source/drain region of the semiconductor structure; wherein a profile of the regrowth region taken along a plane perpendicular to a direction of the semiconductor fin and top surfaces of the insulation region includes a girdle, an upper girdle facet facing away from the insulation region, and a lower girdle facet facing toward the insulation region, and an angle between the upper girdle facet and the girdle is greater than about 54.7 degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.