Coherent spin field effect transistor
US9614149B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2014 |
| Grant date | Apr 4, 2017 |
| Priority date | — |
| Expiry date | Mar 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
Abstract
A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.