Patent · US Active

Programmable delay circuit including hybrid fin field effect transistors (finFETs)

US9614507B2 · kind B2 · utility

1Cited by
0References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 2, 2015
Grant dateApr 4, 2017
Priority date
Expiry dateSep 2, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K2005/00221
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

Embodiments relate to programmable delay circuit. An aspect includes a first stage comprising a first hybrid fin field effect transistor (finFET) comprising a first gate corresponding to a first control FET, and a second gate corresponding to a first default FET, and a first plurality of fins, wherein the first gate and the second gate of the first stage each partially control a first shared fin of the first plurality of fins. Another aspect includes a second stage connected in series with the first stage, the second stage comprising a second hybrid finFET comprising a first gate corresponding to a second control FET, and a second gate corresponding to a second default FET, and a second plurality of fins, wherein the first gate and the second gate of the second stage each partially control a second shared fin of the second plurality of fins.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.