Electronic device and method for fabricating the same
US9619392B2 · kind B2 · utility
0Cited by
7References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 14, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Jun 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a semiconductor memory that includes: a variable resistance element formed over a substrate; and a carbon-containing aluminum nitride layer formed on sidewalls and in an upper portion of the variable resistance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.