Circuit for driving sense amplifier of semiconductor memory device and operating method thereof
US9620197B1 · kind B1 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2016 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Aug 1, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/413
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit for driving a sense amplifier of a semiconductor memory device is provided. The circuit includes a first driving circuit configured to supply a current from a power node to a first driving node of the sense amplifier based on a first driving control signal, a source control circuit configured to generate a control signal based on a second driving control signal and a voltage of the drain node, and a second driving circuit configured to draw current from a second driving node of the sense amplifier to a ground node based on the control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.