In situ control of ion angular distribution in a processing apparatus
US9620335B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2016 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Mar 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3365
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma chamber, an extraction plate having an aperture disposed along a side of the plasma chamber; a deflection electrode disposed proximate the aperture and configured to define a pair of plasma menisci when the plasma is present in the plasma chamber; and a deflection electrode power supply to apply a bias voltage to the deflection electrode with respect to the plasma, wherein a first bias voltage applied to the deflection electrode is configured to generate a first angle of incidence for ions extracted through the aperture from the plasma, and a second bias voltage applied to the deflection electrode is configured to generate a second angle of incidence of ions extracted through the aperture from the plasma, the second angle of incidence being different from the first angle of incidence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.