Method for manufacturing semiconductor device
US9620366B2 · kind B2 · utility
5Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2016 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Jun 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched. The mask layer contains at least one type of a metal, boron, and carbon. The metal is selected from a group including tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium and iridium. A composition ratio of the metal is higher than a composition ratio of the boron and a composition ratio of the carbon. The method includes making a hole or a slit in the layer to be etched by performing a dry etching to the layer to be etched using the mask layer being patterned.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.