Magnetic sidewalls for write lines in field-induced MRAM and methods of manufacturing them
US9620411B2 · kind B2 · utility
1Cited by
6References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 24, 2016 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Mar 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.