Photolithography alignment mark structures, semiconductor structures, and fabrication method thereof

US9620458B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Boxiu Cai · Shanghai, CN
• Yi Huang · Shanghai, CN

Key dates

• Filing date: Sep 22, 2015
• Grant date: Apr 11, 2017
• Expiry date: Sep 22, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method is provided for fabricating a photolithography alignment mark structure. The method includes providing a substrate; thrilling a first grating, a second grating, a third grating and a fourth grating in the substrate; forming a photoresist layer on a surface of the substrate; obtaining a first alignment center along a first direction and a second alignment center along a second direction based on the first grating and the fourth grating, respectively; providing a mask plate having a fifth grating pattern and a sixth grating pattern; aligning the mask plate with the substrate by using the first alignment center as an alignment center along the first direction and the second alignment center as an alignment center along the second direction; reproducing the fifth grating pattern and the sixth grating pattern in the photoresist layer; and forming a fifth grating and a sixth grating on the substrate by removing a portion of photoresist layer.