Magnetoresistive element and manufacturing method thereof
US9620561B2 · kind B2 · utility
12Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2015 |
| Grant date | Apr 11, 2017 |
| Priority date | — |
| Expiry date | Mar 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.