Patent · US Active

Coherent spin field effect transistor

US9620654B2 · kind B2 · utility

1Cited by
1References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 3, 2015
Grant dateApr 11, 2017
Priority date—
Expiry dateApr 3, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/691
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A voltage switchable coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A chrome oxide layer is formed on the cobalt by MBE at room at UHV at room temperature. There was thin cobalt oxide interface between the chrome oxide and the cobalt. Other magnetic materials may be employed. A few ML field of graphene is deposited on the chrome oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.