Patent · US Active

Semiconductor structure with micro-electro-mechanical system devices

US9624092B1 · kind B1 · utility

0Cited by
3References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 29, 2016
Grant dateApr 18, 2017
Priority date
Expiry dateJan 29, 2036

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81C2203/0778
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A semiconductor structure having micro-electro-mechanical system (MEMS) devices is provided. One of the MEMS devices includes a substrate having a first region and a second region; a membrane structure formed in the first region and positioned correspondingly to a cavity of the substrate; a logic device formed in the second region, and electrically connected to the membrane structure; an interconnection structure formed in the second region, and the interconnection structure formed on the substrate and covering the logic device; and an etching stop layer formed in the second region, and the etching stop layer formed on the interconnection structure and including a nitride layer and a carbon-containing layer formed on the nitride layer. Also, a variation in resonant frequencies of the MEMS devices on the entire wafer is less than 10%.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.