Method of HIPIMS sputtering and HIPIMS sputter system
US9624572B2 · kind B2 · utility
2Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2014 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Feb 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3467
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
So as to control the operation of a sputter target (9) during lifetime of the target and under HIPIMS operation part (I) of a magnet arrangement associated to the target (9) is retracted from the target (9) whereas a second part II of the magnet arrangement is, if at all, retracted less from the addressed backside (7) during lifetime of the target (9). Thereby, part I is closer to the periphery of target (9) than part II, as both are eccentrically rotated about a rotational axis (A).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.