Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base
US9625409B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2016 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Feb 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/121
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An exemplary biosensor sensor for detecting the presence of a biological material includes an SOI substrate, a lateral BJT formed on at least a portion of the substrate, and a sensing structure formed on at least a portion of an upper surface of the BJT. The BJT includes an emitter region, a collector region and a base region, the base region being formed between the emitter and collector regions and laterally adjacent thereto. The sensing structure includes at least one dielectric layer contacting at least a portion of the base region. The dielectric layer forms a receptacle for confining a biological molecule being tested and is configured to respond to charges in biological molecules, the charges being converted to a sensing signal by the BJT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.