Patent · US Active

Method for determining an optimal voltage pulse for programming a flash memory cell

US9627074B2 · kind B2 · utility

0Cited by

6References

7Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Jean Coignus · Grenoble, FR

Key dates

Filing date	Apr 19, 2016
Grant date	Apr 18, 2017
Priority date	—
Expiry date	Apr 19, 2036

Classification

Technology area (CPC G)Physics
CPC primaryG11C2216/02
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for determining an optimal voltage pulse for programming a flash memory cell, the optimal voltage pulse being defined by a voltage ramp from a non-zero initial voltage level during a programming duration, wherein the method takes into account a set of parameters including a programming window target value and a drain current target value of the memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.