Composite substrate, semiconductor device including the same, and method of manufacturing the same
US9627197B2 · kind B2 · utility
1Cited by
1References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 15, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Apr 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a composite substrate, a semiconductor device including such composite substrate, and a method of making the same. In particular, the composite substrate of the invention includes a nitride-based single crystal layer transformed from a nitride-based poly-crystal layer, which has a specific thickness of approximately between 2 nm and 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.