Manufacturing method of semiconductor device
US9627203B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 25, 2016 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Apr 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The reliability of a semiconductor device is improved. In a manufacturing method, a film to be processed is formed over a circular semiconductor substrate, and a resist layer whose surface has a water-repellent property is formed thereover. Subsequently, the water-repellent property of the resist layer in the outer peripheral region of the circular semiconductor substrate is lowered by selectively performing first wafer edge exposure on the outer peripheral region of the semiconductor substrate, and then liquid immersion exposure is performed on the resist layer. Subsequently, second wafer edge exposure is performed on the outer peripheral region of the circular semiconductor substrate, and then the resist layer, on which the first wafer edge exposure, the liquid immersion exposure, and the second wafer edge exposure have been performed, is developed, so that the film to be processed is etched by using the developed resist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.