Hybrid semiconductor structure on a common substrate
US9627275B1 · kind B1 · utility
2Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Oct 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a first device and a second device. The first device has a first surface. The first device includes a first active region defined by a first material system. The second device has a second surface. The second surface is coplanar with the first surface. The second device includes a second active region defined by a second material system. The second material system is different from the first material system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.