Apparatus and method for processing a substrate
US9627324B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2010 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Feb 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3641
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a substrate that displays out-gassing when placed in a vacuum comprises placing the substrate in a vacuum and performing an out-gassing treatment by heating the substrate to a temperature T1 and removing gaseous contamination emitted from the substrate until the out-gassing rate is determined by the diffusion of the substrate's contamination and thus essentially a steady state has been established. Afterwards, the temperature is lowered to a temperature T2 at which the diffusion rate of the substrate's contamination is lower than at T1. The substrate is further processed at said temperature T2 until the substrate has been covered with a film comprising a metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.