Method for processing a semiconductor workpiece and semiconductor workpiece

US9627335B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stephan Henneck · Regensburg, DE
• Evelyn Napetschnig · Diex, AT
• Daniel Pedone · Munich, DE
• Bernhard Weidgans · Bernhardswald, DE
• Simon Faiss · Regenstauf, DE
• Ivan Nikitin · Regensburg, DE

Key dates

• Filing date: May 8, 2014
• Grant date: Apr 18, 2017
• Expiry date: Nov 12, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/05644
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization layer over a semiconductor workpiece; patterning the first metallization layer; and depositing a second metallization layer over the patterned first metallization layer, wherein depositing the second metallization layer includes an electroless deposition process including immersing the patterned first metallization layer in a metal electrolyte.