FinFET devices and methods of forming the same
US9627379B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2016 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Mar 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
FinFET devices and methods of forming the same are disclosed. One FinFET device includes a substrate with first and second fins in a first region and third and fourth fins in a second region, and first to fourth gates respectively across the first to fourth fins. The first end sidewall of the first gate is faced to the second end sidewall of the second gate, and a first opening is formed between the first and second end sidewalls. The third end sidewall of the third gate is faced to the fourth end sidewall of the fourth gate, and a second opening is formed between the third and fourth end sidewalls. The first and second regions have different pattern densities, and the included angle between the sidewall of the first opening and the substrate is different from the included angle between the sidewall of the second opening and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.