Semiconductor device having fin-type active patterns and gate nodes
US9627390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Apr 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided. The semiconductor device includes: a plurality of fin-type active patterns which extend along a first direction, and are arranged with respect to each other along a second direction different from the first direction; a contact which is electrically connected to the plurality of fin-type active patterns; a first gate electrode which extends along the second direction and is formed on at least two of the plurality of fin-type active patterns; and a second gate electrode which extends along the second direction and is formed on at least one of the plurality of fin-type active patterns. The first gate electrode is disposed between the contact and the second gate electrode, and the number of fin-type active patterns intersected by the first gate electrode is greater than the number of fin-type active patterns intersected by the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.