Semiconductor device having gate structures and manufacturing method thereof
US9627528B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Sep 11, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a high-voltage doped region having the first conductivity type and disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the high-voltage doped region, a source region disposed in the high-voltage doped region, a first gate structure disposed above a first side portion of the high-voltage doped region between the source region and the drain region, and a second gate structure disposed above a second and opposite side portion of the high-voltage doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.