Silicon carbide schottky diode
US9627553B2 · kind B2 · utility
1Cited by
99References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 5, 2013 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Feb 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H—SiC body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.