Method of forming a pattern using ion beams of bilateral symmetry, a method of forming a magnetic memory device using the same, and an ion beam apparatus generating ion beams of bilateral symmetry
US9627610B2 · kind B2 · utility
2Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2015 |
| Grant date | Apr 18, 2017 |
| Priority date | — |
| Expiry date | Oct 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A pattern-forming method includes providing a first ion beam at a first incidence angle and a second ion beam at a second incidence angle to a surface of an etch target layer formed on a substrate. Patterns are formed by patterning the etch target layer using the first and second ion beams. The first ion beam and the second ion beam are substantially symmetrical to each other with respect to a normal line that is perpendicular to a top surface of the substrate. Each of the first and second incidence angles is greater than 0 degrees and smaller than an angle obtained by subtracting a predetermined angle from 90 degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.